Chinese Optics Letters, Volume. 8, Issue s1, 49(2010)

High ion current density plasma source for ion-assisted deposition of optical thin films

Frank Placido1 and Des Gibson2
Author Affiliations
  • 1Thin Film Centre, University of the West of Scotland Paisley, Paisley, PA1 2BE, Scotland
  • 2Thin Film Solutions Ltd., Block 7, West of Scotland Science Park, Glasgow G20 0TH, Scotland
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    A plasma source utilizing direct current (DC) voltage between an anode and a hot hollow cathode is employed to create high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation, and current densities are found to be separately tunable. Ion current densities >0.5 mA/cm<sup>2</sup> have been demonstrated over coating areas > 1 m diameter. The primary advantage of plasma, as opposed to the ion source approach, is its ability to fill in the vacuum chamber and the couple with evaporant. This induces partial evaporant ionisation, providing uniform ion-assisted deposition over extended coating areas. Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.

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    Frank Placido, Des Gibson, "High ion current density plasma source for ion-assisted deposition of optical thin films," Chin. Opt. Lett. 8, 49 (2010)

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    Paper Information

    Received: Nov. 25, 2009

    Accepted: --

    Published Online: May. 14, 2010

    The Author Email:

    DOI:10.3788/COL201008s1.0049

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