Strong Influence of Temperature and Vacuum on the Photoluminescence of In<sub>0.3</sub>Ga<sub>0.7</sub>As Buried and Surface Quantum Dots

Guodong WANG; Huiqiang JI; Junling SHEN; Yonghao XU; Xiaolian LIU; Ziyi FU

doi:10.1007/s13320-018-0475-z

Photonic Sensors, Volume. 8, Issue 3, 213(2018)

Strong Influence of Temperature and Vacuum on the Photoluminescence of In_0.3Ga_0.7As Buried and Surface Quantum Dots

Guodong WANG^1、*, Huiqiang JI², Junling SHEN², Yonghao XU¹, Xiaolian LIU¹, and Ziyi FU²

Author Affiliations

¹School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China

²School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China

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Guodong WANG, Huiqiang JI, Junling SHEN, Yonghao XU, Xiaolian LIU, Ziyi FU. Strong Influence of Temperature and Vacuum on the Photoluminescence of In_0.3Ga_0.7As Buried and Surface Quantum Dots[J]. Photonic Sensors, 2018, 8(3): 213

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Paper Information

Category: Regular

Received: Oct. 24, 2017

Accepted: Mar. 14, 2018

Published Online: Aug. 4, 2018

The Author Email: Guodong WANG (wgdhpu@hotmail.com)

DOI:10.1007/s13320-018-0475-z

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology