Microelectronics, Volume. 52, Issue 1, 104(2022)

A Two-Stage-Protection SCR Device with Low Trigger Voltage

ZHANG Yingtao1... ZHU Zhihua1, FAN Xiaomei1, MAO Pan2, SONG Bin3, XU Qi’an3, WU Tiejiang3, CHEN Ruike1, WANG Yao1 and LIOU Juin Jei1 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    A two-stage protection SCR (TSPSCR) was proposed to reduce the trigger voltage. The P-ESD layer was implanted in the traditional LVTSCR, and an additional diode was added. Because of the higher doping concentration of P-ESD layer, the device could trigger the first-stage discharge path by avalanche breakdown earlier, thus opening the second-stage discharge path. The Sentaurus TCAD simulation results showed that compared with conventional SCRs, the device had a lower trigger voltage from 10.59 V to 4.12 V, a maintenance voltage of 1.25 V, and a leakage current of 7.85 nA at 1 V DC voltage. The optimized TSPSCR could be used in advanced circuits with 1 V operating voltage.

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    ZHANG Yingtao, ZHU Zhihua, FAN Xiaomei, MAO Pan, SONG Bin, XU Qi’an, WU Tiejiang, CHEN Ruike, WANG Yao, LIOU Juin Jei. A Two-Stage-Protection SCR Device with Low Trigger Voltage[J]. Microelectronics, 2022, 52(1): 104

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    Paper Information

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    Received: May. 20, 2021

    Accepted: --

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210186

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