Fig. 1. Structure of GaN-based blue LD

Fig. 2. Fluorescence microscope images of blue laser epitaxial wafers under different growth temperatures of p-AlGaN cladding layer. (a) 960 ℃; (b) 950 ℃; (c) 940 ℃

Fig. 3. Output power-current curves of blue lasers with different barrier thicknesses

Fig. 4. Internal parameters curves of blue lasers. (a) Three P-I curves of blue lasers with different front facet coating reflectivity; (b) curve of internal loss and carrier injection efficiency obtained by fitting mirror loss and slope efficiency

Fig. 5. Device performance of blue lasers. (a) P-I-V curves of the blue lasers with 45-μm ridge width and 1200-μm cavity length under pulse and continuous-wave operation; (b) lasing wavelength of the blue lasers