High-power blue lasers based on gallium nitride (GaN) have significant prospects in numerous applications, such as laser display, laser lighting, and metal processing. In this study, the epitaxial growth temperature of the p-AlGaN cladding layer of blue lasers is optimized to suppress the thermal degradation of the quantum wells (QWs) and QW structures are optimized to improve the carrier distribution to achieve high-power blue lasers. Upon varying the front facet-coating reflectivity, the internal optical loss and carrier injection efficiency are deduced to be 6.8 cm -1 and 90%, respectively. Under pulsed operations, the threshold current density of the blue lasers is 1 kA/cm 2 and the efficiency gradient is 1.65 W/A. Thus, the expected output power is 4 W at a current density of 6 kA/cm 2. Under continuous-wave operations, the threshold current density of the blue lasers is 1 kA/cm 2 and the efficiency gradient drops to 1 W/A for poor packaging heat dissipation perform. Thus, the output power reaches 2.2 W at a current density of 6 kA/cm 2.