Chinese Journal of Lasers, Volume. 47, Issue 7, 701017(2020)

Study on the Lasing and Thermal Characteristics of Square-FP Coupled Cavity Semiconductor Laser

Huang Yongtao1,2, Ma Chunguang1,2, Hao Youzeng1,2, Xiao Jinlong1,2, Yang Yuede1,2, and Huang Yongzhen1,2、*
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(9)
    Coupled cavity laser consisting of an FP cavity and a square cavity
    TE mode distribution of the HSRL mode coupling at different wavelengths. (a) 1298.3 nm; (b) 1297.6 nm; (c) 1297.8 nm
    SEM image and microscope image of HSRL. (a) SEM image of square-FP coupled cavity; (b) microscope image of patterned P electrode HSRL
    Relationship between SMF coupled output power and injected current in FP cavity and square cavity
    Lasing characteristic curves of HSRL at different bias currents. (a) IFP =52 mA, ISQ=0 mA; (b) IFP =64 mA, ISQ=5 mA
    Lasing spectra of HSRL at different bias currents. (a) ISQ=1 mA, IFP=20--75 mA; (b) ISQ=5 mA, IFP=15--78 mA; (c) ISQ=10 mA, IFP=15--84 mA; (d) ISQ=15 mA, IFP=14--41 mA
    Lasing spectra of laser when ISQ=10 mA. (a) IFP=16,30,45 mA; (b) IFP=55,65,80 mA; (c) relationship between main lasing wavelength , SMSR and IFP
    Lasing characteristic curves of HSRL at different FP cavity bias currents. (a) Relationship between main lasing wavelength, SMSR and ISQ; (b) change curve of laser lasing wavelength with ISQ at IFP=23 mA; (c) lasing spectrum of laser at IFP=23 mA
    Thermal characteristic curves of the HSRL. (a) Temperature of the active region changes with IFP; (b) threshold current of the FP cavity changes with the temperature of the active region
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    Huang Yongtao, Ma Chunguang, Hao Youzeng, Xiao Jinlong, Yang Yuede, Huang Yongzhen. Study on the Lasing and Thermal Characteristics of Square-FP Coupled Cavity Semiconductor Laser[J]. Chinese Journal of Lasers, 2020, 47(7): 701017

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    Paper Information

    Special Issue:

    Received: Feb. 10, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email: Huang Yongzhen (yzhuang@semi.ac.cn)

    DOI:10.3788/CJL202047.0701017

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