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Journal of Semiconductors, Volume. 42, Issue 2, 024102(2021)

The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang1,2, Yan Cui1, Yanru Li1,2, Meiyin Yang1, Jing Xu1, Huiming He3, Shiyu Wang3, Jing Zhang2,3, and Jun Luo1,2
Author Affiliations
  • 1Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
  • 2University of Chinese of Academy Sciences (UCAS), Beijing 100049, China
  • 3School of Information Science and Technology, North China University of Technology, Beijing 100041, China
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    (Color online) (a) The structure of SOT magnetic film. (b) The structure of SOT Hall device. (c) The image of SOT Hall device.

    Fig. 1. (Color online) (a) The structure of SOT magnetic film. (b) The structure of SOT Hall device. (c) The image of SOT Hall device.

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    (Color online) (a) The normalized hysteresis loops of SOT magnetic films under different radiation doses. (b) The differential curves of SOT magnetic films hysteresis loops under different radiation doses. The magnetic field sweep rate is 15 Oe/s. All the experiments are performed at room temperature.

    Fig. 2. (Color online) (a) The normalized hysteresis loops of SOT magnetic films under different radiation doses. (b) The differential curves of SOT magnetic films hysteresis loops under different radiation doses. The magnetic field sweep rate is 15 Oe/s. All the experiments are performed at room temperature.

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    (Color online) (a) The anomalous Hall curves of SOT Hall device films under different radiation doses at room temperature. (b) The differential curves of SOT Hall devices films under different radiation doses at room temperature. The in plane magnetic field is 50 Oe. The pulse time of current is 0.5 ms.

    Fig. 3. (Color online) (a) The anomalous Hall curves of SOT Hall device films under different radiation doses at room temperature. (b) The differential curves of SOT Hall devices films under different radiation doses at room temperature. The in plane magnetic field is 50 Oe. The pulse time of current is 0.5 ms.

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    (Color online) (a) The distribution of equilibrium carriers in the Hall device before radiation. (b) The distribution of nonequilibrium carriers induced by irradiation in the Hall device.

    Fig. 4. (Color online) (a) The distribution of equilibrium carriers in the Hall device before radiation. (b) The distribution of nonequilibrium carriers induced by irradiation in the Hall device.

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    Tengzhi Yang, Yan Cui, Yanru Li, Meiyin Yang, Jing Xu, Huiming He, Shiyu Wang, Jing Zhang, Jun Luo. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J]. Journal of Semiconductors, 2021, 42(2): 024102

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    Paper Information

    Category: Articles

    Received: Jul. 13, 2020

    Accepted: --

    Published Online: Jun. 9, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/2/024102

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology