Mechanism, Characterization, and Device Application of Photothermoelectric Effect

Zhiqiang Guan; Wei Dai; Xiuping Chen; Hongxing Xu

doi:10.3788/CJL221306

Chinese Journal of Lasers, Volume. 50, Issue 1, 0113004(2023)

Mechanism, Characterization, and Device Application of Photothermoelectric Effect

Zhiqiang Guan^1,2,3,4、*, Wei Dai², Xiuping Chen², and Hongxing Xu^2,3,4

Author Affiliations

¹Hubei Yangtze Memory Laboratories, Wuhan 430205, Hubei , China

²School of Physics and Technology, Wuhan University, Wuhan 430072, Hubei , China

³School of Microelectronics, Wuhan University, Wuhan 430072, Hubei , China

⁴Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, Hubei , China

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Figures & Tables(14)

Fig. 1. Temperature dependence of lattice thermal conductivity of 56 nm diameter silicon nanowires, where the solid point is experimental data of reference [8] and the curve represents the calculated data of reference [7]

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Fig. 2. I-V curves and short-circuit photocurrent scanned of Schottky/ohmic electrode contact devices^[11]. (a)(c) Measured I-V curves of Schottky/ohmic electrode contact devices without light irradiation; (b)(d) short-circuit photocurrent (I_sc) of Schottky/ohmic electrode contact devices, the laser wavelength was 633 nm, the power was 0.18 μW (3.67 W/cm²), and the yellow and grey regions correspond to the electrode and Si nanoribbon

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Fig. 3. Estimated thermoelectric response by lattice temperature rising^[11]. (a) Simulated lattice temperature distribution in silicon nanoribbons under continuous laser irradiation; (b) simulated voltage distribution along silicon nanoribbon direction

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Fig. 4. Simulation results of photothermoelectric effect in silicon nanoribbons^[11]. (a) Simulated spatial distribution of electrical potential, electron concentration and electron temperature in silicon nanoribbons at $16.2 W \cdot c m^{- 2}$ laser power density; (b) laser power density dependence of carrier temperature difference $Δ T$ between two ends of Si nanoribbons; (c) laser power density dependence of open circuit voltage $V_{o c}$

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Fig. 5. Simulated laser power density dependence of open-circuit photovoltage $V_{o c}$ of device under different carrier-lattice interaction time $τ_{c}$ and different doping concentrations $N_{A}$ ^[11]. (a) Under different carrier-lattice interaction time $τ_{c}$ ; (b) different doping concentrations $N_{A}$

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Fig. 6. Potential-time and temperature difference-time diagram with switching on/off current in Harman measurement^[35]

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Fig. 7. Dependence of $2 e T α_{m a x} / E_{g}$ on $η_{g} = E_{g} / (k T)$ under different $c$ values^[39]

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Fig. 8. Electronic and optical properties of SrTiO₃^[14]. (a) Schematic of SrTiO₃ (STO) photodetector measurement setup; (b) absorption spectrum of STO; (c) voltage across STO versus corresponding temperature difference (room-temperature Seebeck coefficient of STO is $- 1037 μ V \cdot K^{- 1}$ ); (d) photoelectric responsivity as a function of incident wavelength

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Fig. 9. Photothermoelectric effect photodetector based on two-dimensional materials. (a) Detection of human fingertip radiation by flexible polymer-carbon nanotube^[48]; (b) fast and sensitive photoelectric detection using graphene PN junction^[57]

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Fig. 10. Photothermoelectric effect photodetector based on carbon nanotube^[46]. (a) Schematic illustration of a Ti-CNT-Pd photoelectric detector; (b) photovoltage as a function of air pressure

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Fig. 11. Photothermoelectric effect photodetector based on NbS₃^[13]. (a) Schematic of NbS₃-based detector; (b) schematic of NbS₃-based detector in a flexed state; (c) on-off curves of photovoltage at room temperature, normalized with the same incident power; (d) resistance, response time, and photovoltage under different bending conditions, where $1 / r = 0$ represents the flatting condition

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Fig. 12. Polarization response of photothermoelectric effect^[97]. (a) Photocurrent scanning under resonance grating modulation; (b) when laser is fixed in the narrow slit grating area, the photocurrent response changes with polarization direction of incident laser

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Table 1. Performance summary of photothermoelectric detectors in the past three years

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Table 1. Performance summary of photothermoelectric detectors in the past three years

Active Material	Spectral range	Response time	Responsivity	Noise equivalent power /（ $n W \cdot H z^{- 1 / 2}$ ）	Specific detectivity D^*/ （cm·Hz^1/2·W $^{- 1}$ ）	Seebeck coefficient /（ $μ V \cdot K^{- 1}$ ）
Ti-CNT-Pd^［46］	UV-THz	7 ms	10.6-158 $V \cdot W^{- 1}$	0.05-0.63	$(0.4 - 5) \times 10^{8}$	125
EuBiSe₃^［12］	UV-THz	200 ms	0.59-1.69 $V \cdot W^{- 1}$	0.27-0.67	$2.9 \times 10^{8}$	1000
NbS₃^［13］	UV-THz	<10 ms	1.64-6.9 $V \cdot W^{- 1}$	2.5-10.7	$1.7 \times 10^{6}$	38
Graphene oxide^［47］	UV-THz	34.4 ms	$8.73 \times 10^{- 2}$ $V \cdot W^{- 1}$	20	$4.23 \times 10^{6}$
SrTiO₃^［14］	UV-MIR	1.5 s	0.6-1.2 $V \cdot W^{- 1}$			-1000
Graphene/doped-PANI^［31］	MIR-FIR	1 s	2.5 $V \cdot W^{- 1}$		$6.8 \times 10^{7}$	21.8
CNT/PVA^［48］	MIR-FIR	1 s	0.1 $V \cdot W^{- 1}$	35	$4.9 \times 10^{6}$	25
Graphene/PEDOT：PSS^［49］	MIR	1 s	0.27 $V \cdot W^{- 1}$		$1.4 \times 10^{7}$
Co：BiCuSeO^［50］	Vis-NIR	0.194 s	0.48 $V \cdot W^{- 1}$	30.7	$2.9 \times 10^{6}$	349
Photonic crystal （Bi； Ag； TiO₂）^［51］	Vis	3.9 s	0.26 $V \cdot W^{- 1}$	7.5
MAPbI₃/ graphene oxide^［52］	NIR	1.47 ms	$4.4 \times 10^{- 2}$ $V \cdot W^{- 1}$	7.17		-4.7
MoS₂^［53］	Vis-NIR	372 μs	23.81 $A \cdot W^{- 1}$		$1.18 \times 10^{12}$	$- 6 \times 10^{5}$
NdSb₂^［32］	Vis-NIR	15 μs	$4.9 \times 10^{- 4}$ $A \cdot W^{- 1}$
HgCdTe^［54］	MIR	13 ns	2.5 $A \cdot W^{- 1}$	$10^{- 3}$	$2 \times 10^{10}$
PdSe₂^［55］	Vis	4 μs	$1.3 \times 10^{- 3}$ $A \cdot W^{- 1}$		$2.55 \times 10^{7}$
Si^［11］	Vis	120 ms	$10^{5}$ $V \cdot W^{- 1}$			$9.9 \times 10^{3}$
Black phosphorus^［56］	THz	0.8 μs	297 $V \cdot W^{- 1}$	0.058		198
Graphene^［57］	THz	30 ns	105 $V \cdot W^{- 1}$	0.08

Table 2. Performance parameters of photothermoelectric detector

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Table 2. Performance parameters of photothermoelectric detector

Parameter	Definition	Expression
Responsivity （R）	Ratio of photogenerated current or photogenerated voltage to incident light power	$R_{I} = I_{p} / P$ or $R_{V} = V_{p} / P$ Here， $P$ is the incident light power， $I_{p}$ and $V_{p}$ are photogenerated current and photogenerated voltage， respectively.The units of $R_{I}$ and $R_{V}$ are $A \cdot W^{- 1}$ ， $V \cdot W^{- 1}$ ，respectively
Response time	The rise time τ₁ is the time it takes to transition from 10% to 90% of photogenerated current/voltage and the fall time τ₂ is that the time from 90% to 10% of photogenerated current/voltage	The units of $τ_{1}$ and $τ_{2}$ are s
Noise Equivalent Power （P_NE）	The minimum optical signal power that the photodetector can detect or distinguish from the total noise （environmental induced， internal generated， etc.）	$P_{N E} = i_{N} / R_{i}$ or $P_{N E} = v_{N} / R_{v}$ Here， $i_{N}$ and $v_{N}$ are the current spectral density or voltage spectral density of 1 Hz bandwidth， respectively， with the unit of $A \cdot H z^{- 1 / 2}$ and $V \cdot H z^{- 1 / 2}$ . $R_{i}$ and $R_{v}$ are the current responsivity and voltage responsivity， respectively. The units of P_NE is $W \cdot H z^{- 1 / 2}$
Specific detectivity （ $D^{*}$ ）	Comparing the performance of photodetectors with different sizes in the normalized bandwidth	$D^{} = \sqrt[]{S_{a}} / P_{N E} = \sqrt[]{S_{a}} R_{v} / v_{N}$ Here， $S_{a}$ is the working area of the device. The units of $D^{}$ is Jones or $c m \cdot H z^{1 / 2} \cdot W^{- 1}$ .

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Zhiqiang Guan, Wei Dai, Xiuping Chen, Hongxing Xu. Mechanism, Characterization, and Device Application of Photothermoelectric Effect[J]. Chinese Journal of Lasers, 2023, 50(1): 0113004

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Paper Information

Category: micro and nano optics

Received: Oct. 8, 2022

Accepted: Dec. 9, 2022

Published Online: Jan. 13, 2023

The Author Email: Guan Zhiqiang (zhiqiang.guan@whu.edu.cn)

DOI:10.3788/CJL221306

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology