Photonics Research, Volume. 3, Issue 3, 58(2015)
Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode
Fig. 1. (a) Schematic structure of the BSPK modulator. (b) Cross section of modulation arms showing the single-drive TWE. (c) Equivalent circuit model of the TWE.
Fig. 2. Simulation results of MZI-1. (a) EE and EO S21 responses. (b)
Fig. 3. Effects of various TWE parameters: (a)
Fig. 4. Simulation results of MZI-2. (a) EE and EO S21 responses. (b)
Fig. 5. Measured optical transmission spectra under various bias voltages.
Fig. 6. Measured (a) S21 and (b) S11 responses of MZI-2 with DC bias voltage varying from 0 to
Fig. 7. (a) Measured BPSK signal eye diagram. (b) Measured BPSK constellation diagram. The signal data rate is 32 Gb/s.
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Jinting Wang, Linjie Zhou, Haike Zhu, Rui Yang, Yanyang Zhou, Lei Liu, Tao Wang, Jianping Chen, "Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode," Photonics Res. 3, 58 (2015)
Category: Silicon Photonics
Received: Nov. 28, 2014
Accepted: Feb. 12, 2015
Published Online: Jan. 23, 2019
The Author Email: Linjie Zhou (ljzhou@sjtu.edu.cn)