INFRARED, Volume. 45, Issue 9, 23(2024)

Study on the Preparation Method of Cadmium Zinc Telluride Crystal Samples Based on X-ray Diffraction Topography

Yan-zhang WANG, Jiang-gao LIU, Zhen-xing LI, Wei BAI, Qian LI, and Wei-lin SHE
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    References(5)

    [1] [1] Reddy M, Peterson J M, Vang T, et al. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates [J]. Journal of Electronic Materials, 2011, 40(8): 17061716.

    [2] [2] Cui X P, Fang W Z, Sun S W, et al. Characteristics of the Dislocations in CdZnTe Crystals Revealed by Etch Pits [J]. Journal of Crystal Growth, 2011, 321(1): 4044.

    [3] [3] Sheng F F, Cui X P, Sun S W, et al. Etch Pits of Precipitates in CdZnTe Crystals on (111) B Surface [J]. Journal of Crystal Growth, 2012, 354(1): 7680.

    [4] [4] Black D R, Long G G. X-Ray Topography [M]. Washington: U.S. Government Publishing Office, 2004.

    [8] [8] Ivanitska V G, Moravec P, Franc J, et al. Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid [J]. Journal of Electronic Materials, 2007, 36(8): 18021808.

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    WANG Yan-zhang, LIU Jiang-gao, LI Zhen-xing, BAI Wei, LI Qian, SHE Wei-lin. Study on the Preparation Method of Cadmium Zinc Telluride Crystal Samples Based on X-ray Diffraction Topography[J]. INFRARED, 2024, 45(9): 23

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    Paper Information

    Received: Oct. 23, 2023

    Accepted: --

    Published Online: Nov. 4, 2024

    The Author Email:

    DOI:

    CSTR:32186.14.

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