Journal of Infrared and Millimeter Waves, Volume. 24, Issue 5, 324(2005)
1.3μm InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN ON In0.2 Ga0.8 As-GaAs COMBINED STRAIN-BUFFER LAYER
References(4)
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[4] [4] Chu L, Arzberger M, Bohom G, et al. Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots [J]. J. Appl. Phys., 1999, 85(4): 2355-2362.
[5] [5] Chung T, Walter W, Holonyak Jr N. Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot A1GaAs-GaAs-InGaAs-InAs heterostructure laser [ J ]. Appl. Phys. Lett., 2001,79(27): 4500-4502.
[6] [6] LIU Hui-Yun, Hopkinson M, Tuning the structural and optical properties of 1.3 - μm InAs/GaAs quantum dots by a combined InA1As and GaAs strained buffer layer [ J ]. Appl. Phys. Lett. , 2003, 82(21 ): 3644-3646.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 1.3μm InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN ON In0.2 Ga0.8 As-GaAs COMBINED STRAIN-BUFFER LAYER[J]. Journal of Infrared and Millimeter Waves, 2005, 24(5): 324
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