Fig. 1. （a）BF-TEM of cross section of GaAs_1-xSb_x/InP（x=56.2%）heterojunction，（b）the corresponding selected area electron diffraction （SAED）

Fig. 2. （a）The photoluminescence spectra of the three samples S1（Sb=37.9%），S2（Sb=47.7%）and S3（Sb=56.2%）at 13 K with a power of 2 mW，（b）the compositional dependence trend diagram of PL spectra 's half-peak width and intensity

Fig. 3. Temperature-dependent Raman spectra of GaAs_1-xSb_x /InP heterojunction samples with different Sb components at low power （a）Sample S1（Sb=37.9%），（b）sample S2（Sb=47.7%），（c）sample S3（Sb=56.2%）（dashed arrow is the trend of peak displacement）

Fig. 4. Temperature dependent Raman peak variation trend of GaAs_1-xSb_x epitaxial layer with different Sb components （a）Sample S1（Sb=37.9%），（b）sample S2（Sb=47.7%），（c）sample S3（Sb=56.2%）

Fig. 5. （a）Raman fitting spectra of GaAsSb epitaxial layer with different Sb components at T=80 K，（b）compositional dependence trend of life change at temperatures T=80 K and T=300 K