Yttria-stabilized zirconia (YSZ) films have been prepared by electron beam evaporation at different deposition temperatures with the starting material made of 12% (mole fraction) Y2O3 (99.99%) mixed with ZrO2 (99.99%) powder. The residual stress in yttrial-stabilized zirconia films was measured ZYGO Mark Ⅲ-GPI digital wavefront interferometer. The influence of deposition temperatures on residual stress was studied. The results show that residual stress in yttrial-stabilized zirconia films changes from tensile to compressive with the increase of deposition temperature and the value of the compressive stress increases with the increases of deposition temperature. At the same time, the microstructure of the yttrial-stabilized zirconia films was characterized by X-ray diffractometer. The relationship between residual stress and the microstructure was discussed. Also the residual stress was compared with that in pure ZrO2 films.