Chinese Optics Letters, Volume. 14, Issue 2, 022501(2016)

Short-wave infrared detector with double barrier structure and low dark current density

Yu Dong1, Guanglong Wang1、*, Haiqiao Ni2、**, Kangming Pei2, Zhongtao Qiao1, Jianhui Chen1, Fengqi Gao1, Baochen Li1, and Zhichuan Niu2
Author Affiliations
  • 1Laboratory of Nanotechnology and Microsystems, Mechanical Engineering College, Shijiazhuang 050000, China
  • 2State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100084, China
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    References(20)

    [3] R. Z. Jiao, S. J. Tang, C. Zhang. Acta Phys. Sin., 61, 050320(2012).

    [9] Y. F. Huang, R. Zhang. Spectros. Spectral Anal., 34, 1140(2014).

    [19] N. F. Mott. Proceedings of the Royal Society of London on Mathematical and Physical Sciences, 27(1939).

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    Yu Dong, Guanglong Wang, Haiqiao Ni, Kangming Pei, Zhongtao Qiao, Jianhui Chen, Fengqi Gao, Baochen Li, Zhichuan Niu, "Short-wave infrared detector with double barrier structure and low dark current density," Chin. Opt. Lett. 14, 022501 (2016)

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    Paper Information

    Category: Optoelectronics

    Received: Jul. 5, 2015

    Accepted: Dec. 11, 2015

    Published Online: Sep. 21, 2018

    The Author Email: Guanglong Wang (glwang2005@163.com), Haiqiao Ni (hqni@semi.ac.cn)

    DOI:10.3788/COL201614.022501

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