Nanolithography using hyperlens in planar form and i-line mercury lamp is presented. To obtain patterns with high quality at the imaging plane of hyperlens, lens-photoresist-silver layer structure is employed to avoid the blurring of electric field intensity distribution delivered by the transversal magnetic polarization features of hyperlens. Moreover，the specific design of mask is employed for compensating aberration of magnification non-uniformity of hyperlens.Numerical simulations demonstrate the ability of nanolithography by this method. About 35nm line width with high contrast is obtained in the light distribution and the geometrical parameters influence is also discussed.