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Journal of Semiconductors, Volume. 40, Issue 2, 020301(2019)

Remembering John Bardeen: inventor of transistor

M. A. Rafiq1,3, Chuanbo Li2, and Buwen Cheng3
Author Affiliations
  • 1Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad, 45650, Pakistan
  • 2School of Science, Minzu University of China, Beijing 100081, China
  • 3State Key Laboratory on Integrated optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    John Bardeen receiving Physics Nobel prize in 1956. Reprinted from Ref. [3].

    Fig. 1. John Bardeen receiving Physics Nobel prize in 1956. Reprinted from Ref. [3].

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    First point contact transistor. Reprinted from Ref. [3].

    Fig. 2. First point contact transistor. Reprinted from Ref. [3].

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    Schematic representation of working of point contact transistor. Reprinted from Ref. [4].

    Fig. 3. Schematic representation of working of point contact transistor. Reprinted from Ref. [4].

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    M. A. Rafiq, Chuanbo Li, Buwen Cheng. Remembering John Bardeen: inventor of transistor[J]. Journal of Semiconductors, 2019, 40(2): 020301

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    Paper Information

    Category: Comments and opinions

    Received: --

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/2/020301

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology