Chinese Journal of Lasers, Volume. 45, Issue 10, 1011001(2018)
Raman Scattering Enhancement Characteristics of a Stepped Tip-Active Substrate Structure
Fig. 2. (a) SEM image of the whole stepped tip; (b) partial SEM images of tips with curvature radii of (b) 5 nm, (c) 10 nm, and (d) 40 nm
Fig. 3. Model of the stepped tip with silver film and a silver-nanoparticle active substrate
Fig. 4. Electric field distributions of the stepped tip with silver film and the silver-nanoparticle active substrate in x-z plane. (a) Three-dimensional electric field; (b) near-field electric field intensity
Fig. 5. Model and electric field distributions of a conical tip with silver film and a silver-nanoparticle active substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
Fig. 6. Model and electric field distributions of a stepped tip with silver film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
Fig. 7. Model and electric field distributions of a stepped tip with gold film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
Fig. 8. Model and electric field distributions of a conical tip with gold film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
Fig. 9. Electric field intensity E and enhancement factor GEF as functions of incident angle θ under the conditions of r=5 nm, t=25 nm, h =300 nm, d=55 nm, and g=2 nm
Fig. 10. Electric field intensity E and enhancement factor GEF as functions of the curvature radius r under the conditions of θ=45°, t=25 nm, h=300 nm, d=55 nm, and g=2 nm
Fig. 11. Electric field intensity E and enhancement factor GEF as functions of silver-film thickness t under the conditions of θ=45°, r=5 nm, h=300 nm, d=55 nm, and g=2 nm
Fig. 12. Electric field intensity E and enhancement factor GEF as functions of silver-film height h under the conditions of θ=45°, r=5 nm, t=25 nm, d=55 nm, and g=2 nm
Fig. 13. Electric field intensity E and enhancement factor GEF as functions of silver-nanoparticle diameter d under the conditions of θ=45°, r=5 nm, t=25 nm, h=300 nm, and g=2 nm
Fig. 14. Electric field intensity E and enhancement factor GEF as functions of the gap g between tip and silver nanoparticle under the conditions of θ=45°, r=5 nm, t=25 nm, h=300 nm, and d=55 nm
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Hu Jiacheng, Tang Chao, Zhu Zhendong, Gao Sitian, Cai Jinhui. Raman Scattering Enhancement Characteristics of a Stepped Tip-Active Substrate Structure[J]. Chinese Journal of Lasers, 2018, 45(10): 1011001
Category: spectroscopy
Received: Mar. 15, 2018
Accepted: --
Published Online: Oct. 12, 2018
The Author Email: Hu Jiacheng (hujiacheng@cjlu.edu.cn)