Chinese Journal of Lasers, Volume. 45, Issue 10, 1011001(2018)

Raman Scattering Enhancement Characteristics of a Stepped Tip-Active Substrate Structure

Hu Jiacheng1、*, Tang Chao1, Zhu Zhendong2, Gao Sitian2, and Cai Jinhui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Figures & Tables(14)
    Diagram of the stepped tip and active substrate model
    (a) SEM image of the whole stepped tip; (b) partial SEM images of tips with curvature radii of (b) 5 nm, (c) 10 nm, and (d) 40 nm
    Model of the stepped tip with silver film and a silver-nanoparticle active substrate
    Electric field distributions of the stepped tip with silver film and the silver-nanoparticle active substrate in x-z plane. (a) Three-dimensional electric field; (b) near-field electric field intensity
    Model and electric field distributions of a conical tip with silver film and a silver-nanoparticle active substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
    Model and electric field distributions of a stepped tip with silver film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
    Model and electric field distributions of a stepped tip with gold film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
    Model and electric field distributions of a conical tip with gold film and a glass substrate structure in x-z plane. (a) Diagram of simulation model; (b) three-dimensional electric field; (c) near-field electric field intensity
    Electric field intensity E and enhancement factor GEF as functions of incident angle θ under the conditions of r=5 nm, t=25 nm, h =300 nm, d=55 nm, and g=2 nm
    Electric field intensity E and enhancement factor GEF as functions of the curvature radius r under the conditions of θ=45°, t=25 nm, h=300 nm, d=55 nm, and g=2 nm
    Electric field intensity E and enhancement factor GEF as functions of silver-film thickness t under the conditions of θ=45°, r=5 nm, h=300 nm, d=55 nm, and g=2 nm
    Electric field intensity E and enhancement factor GEF as functions of silver-film height h under the conditions of θ=45°, r=5 nm, t=25 nm, d=55 nm, and g=2 nm
    Electric field intensity E and enhancement factor GEF as functions of silver-nanoparticle diameter d under the conditions of θ=45°, r=5 nm, t=25 nm, h=300 nm, and g=2 nm
    Electric field intensity E and enhancement factor GEF as functions of the gap g between tip and silver nanoparticle under the conditions of θ=45°, r=5 nm, t=25 nm, h=300 nm, and d=55 nm
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    Hu Jiacheng, Tang Chao, Zhu Zhendong, Gao Sitian, Cai Jinhui. Raman Scattering Enhancement Characteristics of a Stepped Tip-Active Substrate Structure[J]. Chinese Journal of Lasers, 2018, 45(10): 1011001

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    Paper Information

    Category: spectroscopy

    Received: Mar. 15, 2018

    Accepted: --

    Published Online: Oct. 12, 2018

    The Author Email: Hu Jiacheng (hujiacheng@cjlu.edu.cn)

    DOI:10.3788/cjl201845.1011001

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