Microelectronics, Volume. 52, Issue 4, 623(2022)

Progress on Cu/SiO2 Wafer-Level Hybrid Bonding Technology for 3D Integration Applications

LIU Yiqun1, ZHANG Hongwei2, and DAI Fengwei3,4
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  • 1[in Chinese]
  • 2[in Chinese]
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    LIU Yiqun, ZHANG Hongwei, DAI Fengwei. Progress on Cu/SiO2 Wafer-Level Hybrid Bonding Technology for 3D Integration Applications[J]. Microelectronics, 2022, 52(4): 623

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    Paper Information

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    Received: Oct. 19, 2021

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210400

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