Fig. 1. Diagram of fabrication of polymer micro/nanostructure with positive photoresist

Fig. 2. Experimental results of DMD based maskless lithography exposure. (a) Scanning electron microscope (SEM) image of 10 μm equidistant line array structure; (b) SEM image of 1 μm equidistant line array structure; (c) minimum line width of 250 nm; (d) line width versus exposure time

Fig. 3. Diagram of single optical field line scanning and results obtained. (a) Diagram of single optical field line scanning;(b) SEM image of 1 μm equidistant line array structure; (c) SEM image of 500 nm equidistant line array structure

Fig. 4. Characterization of width of trench structures fabricated by single optical field exposure and line scanning using atomic force microscopy. (a) (b) Topography of 1 μm equidistant line array structure fabricated by single optical field exposure; (c) height distribution of 1 μm equidistant line array structure fabricated by single optical field exposure; (d)(e) topography of 1 μm equidistant line array structure fabricated by single optical field line scanning; (f) height distribution of 1 μm equi

Fig. 5. Variation in trench width of 1 μm equidistant line array structures fabricated by single optical field exposure and single optical field line scanning

Fig. 6. Diagrams of splicing and equidistant line array structures. (a) Diagram of complete structure; (b) diagram of partial structure; (c) SEM image of 1 μm equidistant line array structure; (d) SEM image of 10 μm equidistant line array structure

Fig. 7. Contact angle between equidistant line array structure and water drop, and contact angle between photoresist film and glass substrate. Variation in contact angle between 1 μL water drop and (a) 1 μm, (b) 3 μm, and (c) 5 μm equidistant line array structures in parallel and vertical directions relative to structure; (d) contact angle between photoresist film and glass substrate

Fig. 8. Contact angle varies with line space in parallel and vertical directions relative to structure