[1] [1] G. C. Bowkett, G. W. Baxter, D. J. Booth et al.. Single-mode 1.34-μm Nd:YVO4 microchip laser with cw Ti:sapphire and diode-laser pumping. Opt. Lett., 1994, 19(13):957～959

[2] [2] R. S. Conroy, A. J. Kemp, G. J. Friel et al.. Microchip Nd:vanadate lasers at 1342 and 671 nm. Opt. Lett., 1997, 22(23):1781～1783

[3] [3] He Jingliang, Zhang Hengli, Hou Wei et al.. Generation of cw radiation of 273 mW at 671 nm from a diode-pumped intracavity-doubled Nd:YVO4 laser. Chin. Phys. Lett., 1998, 15(5):343～344

[4] [4] R. Fluck, B. Braun, E. Gini et al.. Passively Q-switched 1.34-μm Nd:YVO4 microchip laser with semiconductor saturable-absorber mirrors. Opt. Lett., 1997, 22(13):991～993

[5] [5] H. Plaessmann, K. S. Yamada, C. E. Rich et al.. Subnanosecond pulse generation from diode-pumped acousto-optically Q-switched solid-state lasers. Appl. Opt., 1993, 32(33):6616～6619

[6] [6] R. Fluck, G. Zhang, U. Keller et al.. Diode-pumped passively mode-locked 1.3-μm Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers. Opt. Lett., 1996, 21(17):1378～1380

[8] [8] Liu Jinghai, Xu Rongfu. Device and Technology of Lasers. Beijing: Express of University of Beijing Science and Engineering, 1995. 161 (in Chinese)

[9] [9] A. E. Siegman. Lasers. Calif: University Science, Mill Valley, 1986. 1008～1010