Fig. 1. Radiative and Auger 1 recombination carrier lifetimes in intrinsic InAs_1-xSb_x at:（a）77 K and 150 K，（b）250 K and 300 K

Fig. 2. Calculated radiative and Auger 1 recombination carrier lifetimes vs doping concentration for InAs_0.91Sb_0.09 at 77 K，150 K and 300 K

Fig. 3. Vertical distribution of carrier density at 150 K : (a) nBn structure，(b) nBnn⁺ structure

Fig. 4. (a) Material structure（A photo of the fabricated single detector is displayed at the top right），（b）SEM image of the material

Fig. 5. (a)SCM profile of the as grown material (b) (A/C)²-V of the InAsSb detector at 150 K

Fig. 6. Simulated band diagram of the nBnn+ device at : (a) 0 V，（b）-0.2 V，(c) -0.4 V

Fig. 7. Spectral response plot of the device under different biases

Fig. 8. (a) J-V plot of the device at 100~280 K，(b) Arrhenius’s curve of the dark current at -0.4 V

Fig. 9. (a)Calculated dark current components and the experimental J-V plot at 150 K，（b）the space charge density distribution at the barrier interfaces calculated by Sentaurus