Chinese Journal of Lasers, Volume. 29, Issue 11, 987(2002)

L-band Erbium Doped Fiber Amplifier with Intrinsic Gain Flattering Bandwidth of 33 nm

[in Chinese]*, [in Chinese], and [in Chinese]
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    References(5)

    [1] [1] Y. Sun, J. W. Sulhoff, A. K. Srivastavva. 80 nm ultra-wideband erbium-doped silica fibre amplifier [J]. Electron. Lett., 1997, 33(23):1965~1967

    [2] [2] Hirotaka Ono, Makoto Yamada, Terutoshi Kanamori et al.. 1.58-μm band gain-flatenned erbium-doped fiber amplifiers for WDM transmission systems [J]. J. Lightwave Technol., 1999, 17(3):490~496

    [3] [3] C. R. Giles, E. Desurvire. Modeling erbium-doped fiber amplifiers [J]. J. Lightwave Technol., 1991, 9(2):271~283

    [5] [5] Zhang Yanbin, Liu Xiaoming, Peng Jiangde. L-band EDFA Efficiency Enhancement and Dynamic Range Extension by C-band Laser Injection [C]. Asia-Pacific Optical and Wireless Communications (APOC2001), Passive Components and Transmission Systems, 164

    [6] [6] H. S. Chung, M. S. Lee, D. Lee et al.. Low noise, high efficiency L-band EDFA with 980 nm pumping [J]. Electron. Lett., 1999, 35(13):1099~1100

    CLP Journals

    [1] Song Meimei, Feng Sujuan, Mao Qinghe. Influences of Pump Schemes on Gain Properties of L-Band Double-Pass Erbium-Doped Fiber Amplifiers[J]. Acta Optica Sinica, 2010, 30(3): 681

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    [in Chinese], [in Chinese], [in Chinese]. L-band Erbium Doped Fiber Amplifier with Intrinsic Gain Flattering Bandwidth of 33 nm[J]. Chinese Journal of Lasers, 2002, 29(11): 987

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    Paper Information

    Category: Optical communication

    Received: Aug. 6, 2001

    Accepted: --

    Published Online: Aug. 8, 2006

    The Author Email: (zhangyanbin98@mails.tsinghua.edu.cn)

    DOI:

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