Photonics Research, Volume. 9, Issue 9, 1820(2021)
Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors
Fig. 1. (a) Excitation-power-dependent
Fig. 2. (a)
Fig. 3. (a) PDIV curves at 15 K and (b) magnified graph. Squares and circles denote
Fig. 4. (a)
Fig. 5. Normalized photoluminescence (PL) and electroluminescence (EL) spectra measured at (a) 80 mW, 10.1 mA (2.78 V), and 2.63 V (1.9 mA) at an operating temperature of 300 K and (b) 80 mW, 50 mA (4.23 V), and 1.9 mA (3.89 V) at 15 K, respectively.
Fig. 6. Schematic illustration of the band diagram including the proposed carrier transport and accumulation mechanisms at (a) 300 K and (b) 15 K.
Fig. 7. (a)
Fig. 8.
Fig. 9. (a) PDIV curves at 15 K and (b) its magnified graph. The graphs are plotted for the same optical excitation power in Fig.
Fig. 10. Normalized PL spectrum measured at 80 mW and EL spectra depending on the injected current (a) at 300 K and (b) 15 K, respectively.
Fig. 11. Normalized EL spectrum measured at 10.1 mA and PL spectra depending on the optical excitation power at 300 K.
Get Citation
Copy Citation Text
Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, "Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors," Photonics Res. 9, 1820 (2021)
Category: Optoelectronics
Received: Apr. 20, 2021
Accepted: Jun. 12, 2021
Published Online: Aug. 24, 2021
The Author Email: Dong-Pyo Han (han@meijo-u.ac.jp)