975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss

Yuxuan Man; Li Zhong; Xiaoyu Ma; Suping Liu

doi:10.3788/AOS202040.1914001

Acta Optica Sinica, Volume. 40, Issue 19, 1914001(2020)

975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss

Yuxuan Man^1,3, Li Zhong^1、*, Xiaoyu Ma^1,2, and Suping Liu¹

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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$Refractive index and light field distribution of asymmetric large optical cavity$

Fig. 1. Refractive index and light field distribution of asymmetric large optical cavity

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Fig. 2. Calculated hole density in asymmetric large optical cavity

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Fig. 3. Schematic of energy band structure in thermal equilibrium

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Fig. 4. Relationship between inverse external differential quantum efficiency and cavity length

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Fig. 5. Curves of threshold current and threshold current density with cavity length

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Fig. 6. Optical and electrical characteristics for 4 mm broad area lasers with 100 μm stripe width (insert is the spectrum at output power of 21 W)

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Table 1. Doping concentration of each layer in epitaxial structure
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Table 1. Doping concentration of each layer in epitaxial structure
Layer type Doping /(10¹⁸cm^-3)
Contact C: 100
C: 10
P-cladding C: 0.2
C: 0.05
Waveguide Undoped
Quantum well Undoped
Waveguide Undoped
Si: 0.01
N-cladding Si: 0.07
Si: 0.2
Si:0.5
Buffer 1
Substrate 2

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Yuxuan Man, Li Zhong, Xiaoyu Ma, Suping Liu. 975 nm Semiconductor Lasers with Ultra-Low Internal Optical Loss[J]. Acta Optica Sinica, 2020, 40(19): 1914001

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