Journal of Infrared and Millimeter Waves, Volume. 41, Issue 5, 799(2022)
Study on As diffusion control of MBE-grown P-on-N HgCdTe
Figures & Tables(7)
Fig. 1. (a) Cross section of HgCdTe with As doping, (b) XRD curve of HgCdTe/CdTe/GaAs (211)
Fig. 2. The schematic diagram of thermal annealing under Hg pressure Note：A is HgCdTe sample，B is annealing source（with Hg），C is Quartz tube
Fig. 3. SIMS results of HgCdTe before and after annealing under different Hg pressures
Fig. 4. As diffusion coefficients obtained by calculation under different Hg pressures
Fig. 5. Simulated dark current density of P-on-N devices before and after As diffusion annealing
Table 1. Hg pressure of different HgCdTe during thermal annealing at 300 oC
View tableView in ArticleTable 1. Hg pressure of different HgCdTe during thermal annealing at 300 oC
样品编号 加Hg量（g） Hg分压（Pa） Gub313-a 0 0 Gub313-b 0.1 2.37×104 Gub313-c 0.27 3.29×104
Table 2. Diffusion coefficient of As calculated under three conditions
View tableView in ArticleTable 2. Diffusion coefficient of As calculated under three conditions
编号 Hg压 As扩散系数 拟合偏差 Gub313-a 0 2.20E-13 1.20E-13 Gub313-b 2.37E+04 1.25E-14 3.50E-15 Gub313-c 3.29E+04 5.10E-15 2.80E-15
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Chuan SHEN, Liao YANG, Yang-Rong LIU, Shun-Dong BU, Gao WANG, Lu CHEN, Li HE. Study on As diffusion control of MBE-grown P-on-N HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2022, 41(5): 799
Paper Information
Category: Research Articles
Received: Feb. 15, 2022
Accepted: --
Published Online: Feb. 6, 2023
The Author Email: Lu CHEN (chenlu@mail.sitp.ac.cn)
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