Chinese Journal of Lasers, Volume. 45, Issue 6, 0603002(2018)

Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials

Ning Xia1, Xuan Fang1、*, Tianyu Rong1, Dengkui Wang1, Dan Fang1, Jilong Tang1, Xinwei Wang1, Xiaohua Wang1, Yongfeng Li2, Bin Yao2, and Zhipeng Wei1
Author Affiliations
  • 1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 College of Physics, Jilin University, Changchun, Jilin 130023, China
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    Figures & Tables(6)
    Schematic of different treatment processes of samples
    (a) PL spectra at room temperature of samples for different passivation time; (b) AFM diagram of GaAs samples without passivation; (c) AFM diagram of GaAs samples after passivation treatment for 25 min
    PL spectra of samples after passivation treatment for different standing time
    Photocurrent and dark current curves of three groups of samples
    Responsivity at 300-900 nm of samples. (a) Different samples; (b) sample 3 after 30 d
    Schematic of energy bands of GaAs samples. (a) Dark; (b) sample 1, under light; (c) sample 2, under light; (d) sample 3, under light
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    Ning Xia, Xuan Fang, Tianyu Rong, Dengkui Wang, Dan Fang, Jilong Tang, Xinwei Wang, Xiaohua Wang, Yongfeng Li, Bin Yao, Zhipeng Wei. Effect of Surface Sulfur Passivation on Photoresponse Characteristics of GaAs Materials[J]. Chinese Journal of Lasers, 2018, 45(6): 0603002

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    Paper Information

    Category: materials and thin films

    Received: Nov. 2, 2017

    Accepted: --

    Published Online: Jul. 5, 2018

    The Author Email: Fang Xuan (fangxuan110@126.com)

    DOI:10.3788/CJL201845.0603002

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