Chinese Optics Letters, Volume. 3, Issue 8, 08490(2005)

Effect of oxygen flow rate on the properties of SiOx films deposited by reactive magnetron sputtering

Fachun Lai1,2, Ming Li1, Haiqian Wang1、*, Yousong Jiang3, and Yizhou Song3
Author Affiliations
  • 1Hefei National Laboratory for Physical Sciences at Microscale, and USTC-Shincron Joint Lab, University of Science and Technology of China, Hefei 230026
  • 2School of Physics and Opto-Electronics Technology, Fujian Normal University, Fuzhou 350007
  • 3Shincron Co., LTD., Shinagawa-Ku, Toyo 140-0011, Japan
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    SiOx (x=0--2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputtering system with the oxygen flow rate (OFR) changing from 0 to 30 sccm. The samples were characterized by atomic force microscopy, spectrophotometer, and X-ray photoelectron spectroscopy. The extinction coefficient and refractive index decrease, while the optical transmittance increases with the increase of OFR from 0 to 17 sccm. The root mean square surface roughness has a maximum at 10 sccm OFR. The highest deposition rate is at 15 sccm OFR. Our results show that the films deposited at 20 sccm OFR are stoichiometric silica with relatively high deposition rate, low extinction coefficient, and low surface roughness. Therefore, a precise control of OFR is very important to obtain high quality films for optical applications.

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    Fachun Lai, Ming Li, Haiqian Wang, Yousong Jiang, Yizhou Song, "Effect of oxygen flow rate on the properties of SiOx films deposited by reactive magnetron sputtering," Chin. Opt. Lett. 3, 08490 (2005)

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    Paper Information

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    Received: Jan. 7, 2005

    Accepted: --

    Published Online: Jun. 6, 2006

    The Author Email: Haiqian Wang (hqwang@ustc.edu.cn)

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