Chinese Journal of Lasers, Volume. 26, Issue 9, 859(1999)

Study of the Heating Mechanism of a Semiconductor Irradiated by Picosecond and Nanosecond Laser Pulses

[in Chinese], [in Chinese], and [in Chinese]
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    References(5)

    [2] [2] M. K. El-Adawi, E. F. El-Shehawey. Heating a slab induced by a time-dependent laser irradiance -An exact solution. J. Appl. Phys., 1986, 60(7):2250~2255

    [6] [6] Zhonghua Shen, Jian Lu, Xiaowu Ni. Simualation of temperature rise in silicon irradiated by high-power laser pulse. SPIE, 1996, 2888:271~274

    [7] [7] M. von Allmem. Coupling of beam energy to solids, Laser and electron beam processing of materials. New York: Academic Press, 1979. 6

    [8] [8] M. von Allmen, translated by Qi Haibin et al.. Laser-beam Interactions with Materials: Physical Principles and Applications. Beijing: Science Press, 1994. 201

    [9] [9] D. von der Linde, N. Fabricius. Observation of electronic plasma in picosecond laser annealing of silicon. Appl. Phys. Lett., 1982,41(10):991~993

    CLP Journals

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    [in Chinese], [in Chinese], [in Chinese]. Study of the Heating Mechanism of a Semiconductor Irradiated by Picosecond and Nanosecond Laser Pulses[J]. Chinese Journal of Lasers, 1999, 26(9): 859

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    Paper Information

    Category: Laser physics

    Received: Apr. 13, 1998

    Accepted: --

    Published Online: Aug. 9, 2006

    The Author Email:

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