Optimized Structure Design for Low Threshold Quantum Structure Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 26, Issue 6, 485(1999)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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References(2)

[2] [2] Y. Nambu, K. Asakawa. Theoretical analysis of optimal conditions in quantum structure semiconductor lasers for low threshold current. Appl. Phys. Lett., 1995, 67(11):1509～1511

[3] [3] N. Kirstaedter, O. G. Schmidt, N. N. Ledentsov et al.. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers. Appl. Phys. Lett., 1996, 69(9):1226～1228

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimized Structure Design for Low Threshold Quantum Structure Lasers[J]. Chinese Journal of Lasers, 1999, 26(6): 485

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Paper Information

Category: Laser physics

Received: Dec. 15, 1997

Accepted: --

Published Online: Aug. 9, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology