Microelectronics, Volume. 52, Issue 5, 915(2022)
Study on ESD Protection Performance of Gated Diode in 14 nm FinFET Process
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
WANG Jun. Study on ESD Protection Performance of Gated Diode in 14 nm FinFET Process[J]. Microelectronics, 2022, 52(5): 915
Paper Information
Category:
Received: May. 3, 2022
Accepted: --
Published Online: Jan. 18, 2023
The Author Email:
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20