[1] [1] Wang Xiaoming, Guo Weiling, Gao Guo et al.. Gate of dawn-LED will illuminate the future［J］. Advanced Display, 2005, (07): 15～16

[2] [2] Le Shuping, Yi Jianglin, Xiao Huirong. Influence of ESD on aging of GaN/Al2O3 white LEDs［J］. Journal of Functional Materials and Devices, 2008, 14(3): 712～713

[3] [3] M. Meneghini, L. R. Trevisanello, G. Meneghesso et al.. A review on the reliability of GaN-based LEDs［J］. IEEE Trans. Device Mater. Reliab., 2008, 8(2): 323～330

[4] [4] Bai Shengmao, Wang Jing, Miao Hongli et al.. Luminescence prope rties of the Y3-x-y PrxGdyAl5O12Ce3+ Phosphors for white light emitting diodes［J］. Acta Optica Sinica, 2010, 30(5): 1402～1405

[5] [5] D. A. Steigerwald, J. C. Bhat, D. Collins et al.. Illumination with solid state lighting technology［J］. IEEE J. Select. Topics Quant. Electron., 2002, 8(2): 313～314

[6] [6] O. Pursiainen, N. Linder, A. Jaeger et al.. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes［J］. Appl. Phys. Lett., 2001, 79(18): 2895～2896

[7] [7] P. Altieri, A. Jaeger, R. Windisch et al.. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices［J］. J. Appl. Phys., 2005, 98(086101): 1～3

[8] [8] Y. M. Wang, C. B. Xiong, G. X. Wang et al.. Study on aging characterization of 1 W epitaxy on Si substrate blue LED based on different substrates［J］. Acta Optica Sinica, 2010, 30(6): 1749～1753

[9] [9] L. Q. Yang, J. Z. Hu, L. Kim et al.. Variation of thermal resistance with input power in LEDs［J］. Phys. Status Solidi C, 2006, 3(6): 2187～2190

[10] [10] J. Z. Hu, L. Q. Yang, M. W. Shin. Mechanism and thermal effect of delamination in light-emitting diode packages［J］. Microelectron. J., 2007, 38(2): 157～163

[11] [11] S. C. Yang, P. Lin, C. P. Wang et al.. Failure and degradation mechanisms of high-power white light emitting diodes［J］. Microelectron. Reliab., 2010, 50(7): 959～964

[12] [12] Wu Haibin, He Sumei, Wang Changling. Experimental research on the mechanism of causing fast luminous attenuation of white lamp-LED［J］. Acta Optica Sinica, 2009, 29(5): 1363～1367

[13] [13] Liu Xijuan, Wen Yan, Zhu Shaolong. The definition of mean lifetime and text methods of white light emitting diode［J］. Lamps and Lighting, 2001, (4): 16～22

[14] [14] X. A. Cao, P. M. Sandvik, S. F. LeBoeuf et al.. Defect generation in InGaN GaN light-emitting diodes under forward and reverse electrical stresses［J］. Microelectronics Reliability, 2003, 43(12): 1987～1991

[15] [15] S. D. Lester, F. A. Ponce, M. G. Craford et al.. High dislocation densities in high efficiency GaN-based light-emitting diodes［J］. Appl. Phys. Lett., 1995, 66(10): 1249～1251

[16] [16] D. S. Li, H. Chen, H. B. Yu et al.. Dependence of leakage current on dislocations in GaN-based light-emitting diodes［J］. J. Appl. Phys., 2004, 96(2): 1111～1114

[17] [17] P. N. Grillot, M. R. Krames, H. Zhao et al.. Sixty thousand hour light output reliability of AlGaInP light emitting diodes［J］. IEEE Trans. Device Mater. Reliab., 2006, 6(4): 565～569

[18] [18] Gao Guangbo, Li Xuexin. Reliability Physics of Semiconductor Device［M］. Beijing: Science Press, 1987. 458～465