Laser & Optoelectronics Progress, Volume. 62, Issue 15, 1514006(2025)

976 nm External Cavity Diode Laser with High Beam Quality and Narrow Linewidth

Qinghao Zhao1,5, Di Xin4,5, Kai Gong4,5, Hai Wang2,3, Xuyan Zhou2, and Hongbo Zhang3、*
Author Affiliations
  • 1College of Information Science and Engineering, Shandong University, Qingdao 266237, Shandong , China
  • 2Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 3School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4College of Physics and Physical Engineering, Qufu Normal University, Jining 273165, Shandong , China
  • 5Weifang Academy of Advanced Opto-Electronic Circuits, Weifang 261021, Shandong , China
  • show less
    Cited By

    Article index updated: Oct. 2, 2025

    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
    Tools

    Get Citation

    Copy Citation Text

    Qinghao Zhao, Di Xin, Kai Gong, Hai Wang, Xuyan Zhou, Hongbo Zhang. 976 nm External Cavity Diode Laser with High Beam Quality and Narrow Linewidth[J]. Laser & Optoelectronics Progress, 2025, 62(15): 1514006

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Lasers and Laser Optics

    Received: Dec. 17, 2024

    Accepted: Jan. 20, 2025

    Published Online: Aug. 4, 2025

    The Author Email: Hongbo Zhang (hbzhang@ucas.ac.cn)

    DOI:10.3788/LOP242432

    CSTR:32186.14.LOP242432

    Topics