Giant photoinduced reflectivity modulation of nonlocal resonances in silicon metasurfaces

Andrea Tognazzi; Paolo Franceschini; Olga Sergaeva; Luca Carletti; Ivano Alessandri; Giovanni Finco; Osamu Takayama; Radu Malureanu; Andrei V. Lavrinenko; Alfonso C. Cino; Domenico de Ceglia; Costantino De Angelis

doi:10.1117/1.AP.5.6.066006

Advanced Photonics, Volume. 5, Issue 6, 066006(2023)

Giant photoinduced reflectivity modulation of nonlocal resonances in silicon metasurfaces On the Cover

Andrea Tognazzi^1,2, Paolo Franceschini^2,3、*, Olga Sergaeva^3,4, Luca Carletti^2,3, Ivano Alessandri^2,3, Giovanni Finco⁵, Osamu Takayama⁶, Radu Malureanu⁶, Andrei V. Lavrinenko⁶, Alfonso C. Cino¹, Domenico de Ceglia^2,3, and Costantino De Angelis^2,3

Author Affiliations

¹University of Palermo, Department of Engineering, Palermo, Italy

²National Institute of Optics-National Research Council, Brescia, Italy

³University of Brescia, Department of Information Engineering, Brescia, Italy

⁴ITMO University, School of Physics and Engineering, Saint-Petersburg, Russia

⁵ETH Zurich, Institute for Quantum Electronics, Department of Physics, Optical Nanomaterial Group, Zurich, Switzerland

⁶Technical University of Denmark, Department of Electrical and Photonics Engineering, Kongens Lyngby, Denmark

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Fig. 1. (a) Sketch of the experiment working principle: a pump pulse (blue) excites the sample and changes the optical properties of silicon (brown). A delayed low-intensity probe pulse (yellow) monitors the reflectivity changes. The image is a false color scanning electron micrograph of the NLM. Dimensions: $w = 393 nm$ , $d = 500 nm$ , $P = 820 nm$ , $w_{p} = 73 nm$ , $h_{p} = 160 nm$ , and $h = 1160 nm$ . (b) Experimental (circles) and calculated (RCWA, red solid line) reflectance spectra ( $R_{eq}$ ) at equilibrium. The inset shows the TE mode spatial distribution in the $y z$ plane (orthogonal to the grating) at 1375-nm wavelength (black arrow).

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Fig. 2. (a) Experimental $Δ R / R$ spectra at different time delays (denoted by the labels on the left side). For clarity, the curves are vertically shifted (labels on the right side). (b) Simulated $Δ R / R$ spectra at the same time delays as in (a) employing CREM + RCWA model. For clarity, the curves are vertically shifted. (c) Real (Re, dashed line) and imaginary (Imag, solid line) parts of the individual components contributing to $Δ ε$ calculated from the model analysis: TPA ( $Δ ε_{TPA}$ ), FC generation ( $Δ ε_{FC}$ ), and lattice heating ( $Δ ε_{L}$ ). The curves are horizontally shifted by 0.64 ps to visualize negative delay times on a logarithmic scale. (d) Temporal evolution of the shift: $Δ λ_{Γ}$ from modal analysis (blue solid line) and $Δ λ_{r}$ from differential fit (yelllow markers). The data (both solid line and markers) are horizontally shifted by 0.64 ps to visualize negative delay times on a logarithmic scale.

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Fig. 3. (a) Experimental $Δ R / R$ spectra measured for increasing fluence values. The inset reports the resonance shift $Δ λ_{r}$ (retrieved from the measured $Δ R / R$ spectra) as a function of the incident fluence, and the solid black line denotes a linear dependence. The red triangle denotes the probe wavelength value in which the data in (b) are taken. (b) Experimental minimum $Δ R / R$ at $λ = 1367.5 nm$ as a function of the fluence (black markers). The black dashed line denotes a linear dependence of the $Δ R / R$ signal upon the fluence.

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Table 1. Summary of the material parameter values adopted in this work for CREM + RCWA approach.

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Table 1. Summary of the material parameter values adopted in this work for CREM + RCWA approach.


Parameter	Value	Units	Reference
$C_{p}$	$1.66 \times 10^{6}$	$J K^{- 1}$ $m^{3}$	25
$β_{TPA}$	$1.5 \times 10^{- 6}$	$m W^{- 1}$	25
$ε_{Si}$	${(5.3410 + i 0.24127)}^{2}$ at 410 nm	—	45
$ε_{Si}$ , $ε_{sub}$	12.2 at 1370 nm	—	45
$ε_{{SiO}_{2}}$	2.09 at 1370 nm	—	46
$η_{1}$	$1.888 \times 10^{- 4}$ at 1370 nm	$K^{- 1}$	40
$m_{eff}$	0.153 $m_{e}$	—	47
$τ_{d}$	10	fs	48
$γ$	$3 \times 10^{- 15}$	$m^{3}$ $s^{- 1}$	49

Table 2. Comparison between different metasurfacesa.

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Table 2. Comparison between different metasurfacesa.


Material	Platform	$\| Δ R / R \|$ or $\| Δ T / T \|$ (%)	Fluence	Reference
Si	Bulk single crystal (001)	7	$16 mJ / {cm}^{2}$	53
Si	Huygens	3	$40 mJ / {cm}^{2}$	54
Si	Bulk (001)	0.04	$2.4 mJ / {cm}^{2}$	32
Poly-Si	Nonlocal	57	$250 μ J / {cm}^{2}$	This work
Poly-Si	Nonlocal	27	$130 μ J / {cm}^{2}$	This work
Si, ${SiO}_{2}$	Bilayer	2.6	$120 μ J / {cm}^{2}$	This work
a-Si:H	Huygens	0.6	$30 μ J / {cm}^{2}$	23
a-Si:H	Huygens	8	$800 μ J / {cm}^{2}$	25
GaAs	Huygens	60	$310 μ J / {cm}^{2}$	24
GaAs-AlAs-InAs	QD embedded + Bragg mirror	20	2 to $3 mJ / {cm}^{2}$	21
Au-ITO	Planar plasmonic crystal	80	NA	22
Au-Si	Grating	60	$2 mJ / {cm}^{2}$	55
$V_{2} O_{3}$	Thin film	14	$8 mJ / {cm}^{2}$	56

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Andrea Tognazzi, Paolo Franceschini, Olga Sergaeva, Luca Carletti, Ivano Alessandri, Giovanni Finco, Osamu Takayama, Radu Malureanu, Andrei V. Lavrinenko, Alfonso C. Cino, Domenico de Ceglia, Costantino De Angelis, "Giant photoinduced reflectivity modulation of nonlocal resonances in silicon metasurfaces," Adv. Photon. 5, 066006 (2023)

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Paper Information

Category: Research Articles

Received: Sep. 6, 2023

Accepted: Nov. 1, 2023

Published Online: Jan. 5, 2024

The Author Email: Franceschini Paolo (paolo.franceschini@unibs.it)

DOI:10.1117/1.AP.5.6.066006

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology