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Acta Physica Sinica, Volume. 68, Issue 24, 246301-1(2019)

Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis

Bing-Quan Huang1, Tie-Ge Zhou2, Dao-Xiong Wu3, Zhao-Fu Zhang4, and Bai-Kui Li1、*
Author Affiliations
  • 1College of Physics and Optoelectronic Engineeing, Shenzhen University, Shenzhen 518060, China
  • 2College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
  • 3Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
  • 4Department of Engineering, Cambridge University, Cambridge CB2 1PZ, United Kingdom
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    Bing-Quan Huang, Tie-Ge Zhou, Dao-Xiong Wu, Zhao-Fu Zhang, Bai-Kui Li. Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis[J]. Acta Physica Sinica, 2019, 68(24): 246301-1

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    Paper Information

    Received: Aug. 20, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email:

    DOI:10.7498/aps.68.20191258

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