Fig. 1. Schematic diagram of theoretical consideration of the sample and experimental measurement

Fig. 2. The LLs and Fermi level as a function of magnetic field strength B for a carrier density Ne=3×1012cm-2 in ML-MoS₂. The effective Zeeman fields are Bc=30meV and Bv=20meV. The top and bottom panels correspond to the conduction and valence bands，respectively

Fig. 3. The magneto-optical conductivity induced via the transitions processes within the conduction band LLs as a function of photon energy ℏω at fixed temperature，electron density，and effective Zeeman fields for different magnetic field strengths in n-type ML-MoS₂

Fig. 4. The magneto-optical conductivity induced via the transitions processes within the conduction band LLs as a function of photon energy ℏω at fixed temperature，electron density，and magnetic field strength for different effective Zeeman fields in n-type ML-MoS₂

Fig. 5. The magneto-optical conductivity induced via the transitions from the occupied valence band to conduction band with an electron density Ne=3×1012cm-2 as a function of photon energy ℏω at a fixed temperature，electron density，effective Zeeman fields，and magnetic field strength. The magneto-optical absorptions from the first six transition channels are indicated