Gallium oxide crystal materials has enormous potential in the fields of power devices and optoelectronics due to its excellent performance and the advantage of being able to grow by melt method. In recent years, numerous experts at home and abroad have also started researching gallium oxide single crystal materials. High quality and low defect gallium oxide single crystal materials are extremely important for subsequent epitaxy and device preparation. At present, the mainstream growth method internationally is edgedefined filmfed growth method (EFG), which has advantages such as short growth cycle, large size, and stable growth. However, there is still great room for progress in crystal defect control. This article focuses on the morphology of corrosion pits in gallium oxide single crystals, and processes samples of gallium oxide single crystals grown by EFG. Corrosion experiments were conducted under different acid and alkali conditions. A detailed introduction was given to the different observed corrosion pit morphologies, and the impact of crystal defects on the corrosion pit morphologies was analyzed. This is of great significance for the future research on the growth mechanism of gallium oxide single crystals and crystal defects.