The 60Co γ total dose radiation experiments were carried out on deep submicron NMOS and PMOS transistors. The experimental results showed that PMOS transistors had better anti-irradiation capability than NMOS transistors in terms of transfer characteristics, noise and matching characteristics. The radiation damage mechanism of NMOS transistors and PMOS transistors were analyzed theoretically. The results showed that different substrate types lead to different radiation effects of PMOS transistors and NMOS transistors. Based on the experimental and analytical results, some anti-radiation design schemes for deep submicron IC simulation were proposed.