Co-Optimization of Equivalent Circuit and Energy Conversion Performance of Photonic Radiation Devices

Tianjun Liao; Dongbing Han; Zhimin Yang

doi:10.3788/AOS250639

Acta Optica Sinica, Volume. 45, Issue 11, 1125002(2025)

Co-Optimization of Equivalent Circuit and Energy Conversion Performance of Photonic Radiation Devices

Tianjun Liao^1、*, Dongbing Han¹, and Zhimin Yang²

Author Affiliations

¹Department of Physics and Energy, Chongqing University of Technology, Chongqing , 400054, China

²School of Physics and Electronic Information, Yan’an University, Yan’an 716000, Xiaanxi, China

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Figures & Tables(7)

Fig. 1. Structure and equivalent circuit diagrams of the PRD^[14]. (a) Structure diagram; (b) equivalent circuit diagram

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Fig. 2. Volt-ampere characteristic curves under different T_R and α. (a) T_R; (b) $α$

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Fig. 3. The contour graphs of the power density andthe efficiency varying with output voltage and doped concentration. (a) Power density; (b) efficiency

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Fig. 4. Performance characteristic curves. (a) $P_{o p t}$ and $η_{o p t}$ vary with $α$ ; (b) $V_{o p t, P}$ and $V_{o p t, η}$ vary with $α$ ; (c) $P_{o p t}$ varies with $η_{o p t}$

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Fig. 5. Curves of $η_{m a x}$ , $P_{m a x}$ , and $α_{m, P} - α_{m, η}$ varying with $T_{R}$ for given three values of $ε_{c} - ε_{t}$ . (a) Maximum efficiency $η_{m a x}$ and maximum power density $P_{m a x}$ ; (b) difference $α_{m, P} - α_{m, η}$

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Table 1. Parameter of PRD

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Table 1. Parameter of PRD

Parameter	Value
Series resistance $R_{S}$ /（ $Ω \cdot m^{2}$ ）	$2 \times 10^{- 6}$
Shunt resistance $R_{S h}$ / $(Ω \cdot m^{2})$	$1 \times 10^{5}$
Auger activation energy $ε_{a}$ / $e V$	0.35
Ideal factor of diode $γ$	2
Intrinsic concentration at ambient temperature $N_{i}$ / $m^{- 3}$	$6.06 \times 10^{20}$
Auger recombination coefficient at ambient temperature $C_{0}$ / $(m^{6} \cdot s^{- 1})$	$1.13 \times 10^{- 39}$
Semiconductor thickness $d_{j}$ /nm	100
Defect capture cross-sectional area $σ_{e} = σ_{h}$ / $m^{2}$	$0.44 \times 10^{- 15}$
Defect concentration $N_{t}$ / $m^{- 3}$	$9 \times 10^{- 19}$

Table 2. Comparison of optimal performance under ideal and non-ideal conditions ( $ε_{c} - ε_{t} = 0.20 e V$ )

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Table 2. Comparison of optimal performance under ideal and non-ideal conditions ( $ε_{c} - ε_{t} = 0.20 e V$ )

Work conditons

$P_{m a x}$ /

$(W \cdot m^{- 2})$

V_{o p t, P}

${N_{A,}}_{o p t, P}$ /

$(10^{23} m^{- 3})$

$N_{D, o p t, P}$ /

$(10^{23} m^{- 3})$

η_{m a x}

V_{o p t, η}

${N_{A,}}_{o p t, η}$ /

$(10^{23} m^{- 3})$

$N_{D, o p t, η}$ /

$(10^{23} m^{- 3})$

Constant temperature, symmetrical doping

450

0.060

3.40

9.79

0.097

2.60

Variable temperature, non-symmetric doping

284

0.056

1.47

1.48

2.91

0.084

1.39

1.40

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Tianjun Liao, Dongbing Han, Zhimin Yang. Co-Optimization of Equivalent Circuit and Energy Conversion Performance of Photonic Radiation Devices[J]. Acta Optica Sinica, 2025, 45(11): 1125002

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Paper Information

Category: OPTOELECTRONICS

Received: Feb. 24, 2025

Accepted: Apr. 15, 2025

Published Online: Jun. 23, 2025

The Author Email: Tianjun Liao (liaotianjun@cqut.edu.cn)

DOI:10.3788/AOS250639

CSTR:32393.14.AOS250639

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Parameter of PRD

Table 1. Parameter of PRD

Table 2. Comparison of optimal performance under ideal and non-ideal conditions (εc-εt=0.20 eV)

Table 2. Comparison of optimal performance under ideal and non-ideal conditions (εc-εt=0.20 eV)

Table 2. Comparison of optimal performance under ideal and non-ideal conditions ( $ε_{c} - ε_{t} = 0.20 e V$ )

Table 2. Comparison of optimal performance under ideal and non-ideal conditions ( $ε_{c} - ε_{t} = 0.20 e V$ )