The photonic radiation device (PRD) has attracted considerable attention for its potential applications in energy conversion and optoelectronics. Previous research has established an innovative equivalent circuit model for the PRD, elucidating the impacts of the carrier radiative recombination current ratio, series internal resistance, and parallel resistance on its volt-ampere characteristics and power density. However, the understanding of cooperatively regulating the PRD’s thermal, optical, and electrical properties remain limited. This study aims to develop a comprehensive theoretical framework that illuminates the interrelation of these properties and provides guidance for optimizing the PRD’s performance. The PRD represents an advanced technology with substantial potential in sustainable energy solutions and advanced optoelectronic applications. Its capacity to convert thermal energy into electrical energy through photonic radiation establishes it as a promising candidate for renewable energy systems. While the equivalent circuit model offers while providing valuable insights into the PRD’s electrical behavior, its correlation with thermal and optical properties requires further investigation. This study addresses to bridge this knowledge gap by examining the synergistic effects of these properties on the PRD’s overall performance. Through understanding these property interactions, this study aims to establish guidelines for enhancing the PRD’s efficiency and stability, facilitating its implementation in practical applications.

We begin by establishing the relationship between the carrier’s non-radiative recombination rate and key parameters. This involves a detailed analysis of how non-radiative recombination processes compete with radiative ones, affecting the PRD’s output characteristics. By integrating the equivalent circuit model with Planck’s thermal radiation theory and carrier recombination theory, we systematically explore how doping concentration, output voltage, heat source temperature, and defect energy level influence the PRD’s energy conversion performance. This multi-disciplinary approach allows us to model the PRD’s behavior across different operational conditions and parameter variations. Numerical simulations are employed to model the PRD’s performance under varying doping concentrations and output voltages. These simulations take into account the complex interplay of thermal, optical, and electrical factors, providing a comprehensive view of the PRD’s behavior. Optimization techniques are then applied to identify the optimal operating conditions that maximize both power density and conversion efficiency. The study also examines the impact of defect energy levels on carrier recombination processes, revealing how these levels can be engineered to enhance the PRD’s performance.

The findings reveal that optimizing the output voltage and doping concentration can substantially enhance the PRD’s performance. At 800 K, the PRD achieves a maximum power density of 450 W·m^-2 and a conversion efficiency of 9.79%. This represents a significant improvement over previous designs and demonstrates the effectiveness of our theoretical framework. A trade-off analysis delineates the optimal regions for doping concentration and voltage, providing practical guidelines for PRD design. Importantly, defect energy levels near the valence band top prove most effective for high-efficiency energy conversion. This is attributed to the reduced non-radiative recombination rates at these energy levels, which enhance the PRD’s thermal-to convert thermal-electrical energy intoconversion electricalcapability. The study also highlights that while power density increases with operating temperature, there is an optimal temperature for maximizing conversion efficiency. This optimal temperature balances the competing effects of increased thermal energy input and the associated rise in non-radiative recombination processes. The study addresses practical considerations regarding semiconductor stability at highelevated temperatures are also discussed. The research underscores the importance of selecting an appropriate heat source temperature, as excessively high temperatures may compromise semiconductor stability and longevity, thereby limiting the PRD’s operational lifetime.

This research advances the theoretical understanding of the PRD’s energy conversion mechanisms by examining the cooperative effects of its thermal, optical, and electrical properties. The integration of multiple theoretical models provides a robust foundation for optimizing PRD performance. The insights gained offer critical guidance for the design and development of PRDs, supporting their application in energy harvesting and optoelectronic technologies. Future research could further explore material innovations and nanostructured designs to enhance PRD capabilities, such as using novel semiconductor materials with tailored band structures or incorporating nanostructuring techniques to improve carrier transport and reduce recombination losses. Additionally, experimental validation of the theoretical findings would strengthen the practical relevance of this research, paving the way for real-world applications of PRD technology. By addressing both theoretical and practical aspects, this study contributes to the broader goal of developing efficient and sustainable energy conversion technologies for the future.