Chinese Journal of Lasers, Volume. 13, Issue 7, 438(1986)
Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties
[1] [1] F. C. Zumsteg; J. Appl. Phys., 1976, 47, No. 11, 4980.
[2] [2] G. M. Loiacono, J. C. Jacoo; Flux Growth and Characterization of KT1OPO4 Crystals, Abstract of ICCQ-7 (1983) GB/3.
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Liu Yaogang, Xu Bin, Han Jianru, Liu Xiangyang, Jiang Minhua. Growth of KTiOPO4 crystal for high efficiency SHG devices and its main properties[J]. Chinese Journal of Lasers, 1986, 13(7): 438
Category: laser devices and laser physics
Received: May. 16, 1985
Accepted: --
Published Online: Aug. 2, 2012
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CSTR:32186.14.