Effects of Si<sub>1-x</sub>Ge<sub>x</sub>∶C buffers′ Growth Parameters on Ge films by Chemical Vapor Deposition

Ge Ruiping; Han Ping; Wu Jun; Wang Ronghua; Yu Fei; Zhao Hong; Yu Huiqiang; Xie Zili; Zhang Rong; Zheng Youdou

Chinese Journal of Lasers, Volume. 36, Issue 5, 1205(2009)

Effects of Si_1-xGe_x∶C buffers′ Growth Parameters on Ge films by Chemical Vapor Deposition

Ge Ruiping^*, Han Ping, Wu Jun, Wang Ronghua, Yu Fei, Zhao Hong, Yu Huiqiang, Xie Zili, Zhang Rong, and Zheng Youdou

Author Affiliations

[in Chinese]

show less

Abstract Get PDF(in Chinese)

Cited By

Article index updated: Sep. 7, 2025

The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)

Tools

Get Citation

Copy Citation Text

Ge Ruiping, Han Ping, Wu Jun, Wang Ronghua, Yu Fei, Zhao Hong, Yu Huiqiang, Xie Zili, Zhang Rong, Zheng Youdou. Effects of Si_1-xGe_x∶C buffers′ Growth Parameters on Ge films by Chemical Vapor Deposition[J]. Chinese Journal of Lasers, 2009, 36(5): 1205

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: materials and thin films

Received: Aug. 30, 2008

Accepted: --

Published Online: May. 22, 2009

The Author Email: Ge Ruiping (rpge_nju@yahoo.com.cn)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology