In this work, Ge films have been deposited on Si (100) substrates with the Si1-xGex∶C buffer by chemical vapor deposition method. X-ray diffraction、scanning electron microscopy and Raman diffusion spectra were applied to characterize the Ge/Si1-xGex∶C/Si samples. The results show that the concentration of Ge atoms in Si1-xGex∶C buffer declines gradually from the surface to the substrate and the average Ge content in the Si1-xGex∶C buffer decreases while the growth temperature of the buffer increasing, this is related to the diffusing of Ge atoms due to the higher growth temperature (780～820℃). Ge films grown on the Si1-xGex∶C buffer have only one crystal orientation and the crystal quality of Ge films decreases while the growth temperature increases.