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Chinese Journal of Lasers, Volume. 52, Issue 18, 1803025(2025)

Research on Bonding and Sealing Technology for Yb∶YAG/SiC Disk Laser Gain Device (Invited)

Wenqi Jia1, Xiaoxuan Li2,3, Ruyan Kang1, Xiaoshan Wang2,3, Ranyou Zhao6, Zehan Liu4、***, Guangzhi Zhu6、**, and Zhiyuan Zuo1,2,5、*
Author Affiliations
  • 1Institute of Novel Semiconductors, Shandong University, Jinan 250100, Shandong , China
  • 2Center for Optics Research and Engineering, Shandong University, Qingdao 266237, Shandong , China
  • 3Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, Shandong , China
  • 4Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR999078, China
  • 5Key Laboratory for Laser Technologies and Applications, Shandong University, Qingdao 266237, Shandong , China
  • 6School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei , China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (13)
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    Figures & Tables(13)
    SEM and AFM images of Yb∶YAG disk before and after polishing treatment. (a) SEM image before polishing treatment; (b) SEM image after polishing treatment; (c) AFM image before polishing treatment; (d) AFM image after polishing treatment

    Fig. 1. SEM and AFM images of Yb∶YAG disk before and after polishing treatment. (a) SEM image before polishing treatment; (b) SEM image after polishing treatment; (c) AFM image before polishing treatment; (d) AFM image after polishing treatment

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    Flowchart of interlayer bonding process for Yb∶YAG/SiC disk

    Fig. 2. Flowchart of interlayer bonding process for Yb∶YAG/SiC disk

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    Variation curves of center temperature of the disk as a function of pump intensity

    Fig. 3. Variation curves of center temperature of the disk as a function of pump intensity

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    Evolution of average interlayer thickness as a function of spin speed

    Fig. 4. Evolution of average interlayer thickness as a function of spin speed

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    Variation of the average bonding interlayer thickness reduction rate during spin speed ramping

    Fig. 5. Variation of the average bonding interlayer thickness reduction rate during spin speed ramping

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    Raman spectra of Yb∶YAG/SiC disk laser devices. (a) Raman spectra of devices fabricated at different spin speeds; (b) magnified view of Raman spectra in the 230‒300 cm-1 wavenumber region

    Fig. 6. Raman spectra of Yb∶YAG/SiC disk laser devices. (a) Raman spectra of devices fabricated at different spin speeds; (b) magnified view of Raman spectra in the 230‒300 cm-1 wavenumber region

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    Stress distribution maps of the bonding interface under different spin speeds. (a) 2×103 r/min; (b) 4×103 r/min; (c) 6×103 r/min; (d) 8×103 r/min; (e) 10×103 r/min

    Fig. 7. Stress distribution maps of the bonding interface under different spin speeds. (a) 2×103 r/min; (b) 4×103 r/min; (c) 6×103 r/min; (d) 8×103 r/min; (e) 10×103 r/min

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    Variations of average bonding interlayer thickness and bonding interface stress in devices at different spin speeds

    Fig. 8. Variations of average bonding interlayer thickness and bonding interface stress in devices at different spin speeds

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    Tensile strength variation curves of devices at different spin speeds

    Fig. 9. Tensile strength variation curves of devices at different spin speeds

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    Variation curves of average bonding interlayer thickness and bonding strength in devices at different spin speeds

    Fig. 10. Variation curves of average bonding interlayer thickness and bonding strength in devices at different spin speeds

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    • Table 1. Bonding interlayer thickness under different spin speeds

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      Table 1. Bonding interlayer thickness under different spin speeds

      Spin speed/（103 r/min）246810
      Data 15.883.192.171.971.55
      Data 25.692.971.931.300.95
      Data 35.062.471.490.980.68
      AVE5.542.881.861.421.06

    • Table 2. Average bonding stress and RMS of the bonding interface at different spin speeds

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      Table 2. Average bonding stress and RMS of the bonding interface at different spin speeds

      Spin speed /（103 r/min）246810
      Average bonding stress /MPa-312.10132.67262.15498.89531.88
      RMS /MPa148.06295.42342.60312.14457.96

    • Table 3. Interlayer thickness and bonding strength of devices at different spin speeds

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      Table 3. Interlayer thickness and bonding strength of devices at different spin speeds

      Spin speed /（103 r/min）246810
      Average thickness /μm5.542.881.861.421.06
      Bonding strength /MPa17.0518.4918.748.167.00
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    Wenqi Jia, Xiaoxuan Li, Ruyan Kang, Xiaoshan Wang, Ranyou Zhao, Zehan Liu, Guangzhi Zhu, Zhiyuan Zuo. Research on Bonding and Sealing Technology for Yb∶YAG/SiC Disk Laser Gain Device (Invited)[J]. Chinese Journal of Lasers, 2025, 52(18): 1803025

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    Paper Information

    Category: Materials

    Received: Jun. 16, 2025

    Accepted: Jul. 21, 2025

    Published Online: Sep. 12, 2025

    The Author Email: Zehan Liu (liuzehan0516@163.com), Guangzhi Zhu (zgzlaser@hust.edu.cn), Zhiyuan Zuo (zuozhiyuan@sdu.edu.cn)

    DOI:10.3788/CJL250961

    CSTR:32183.14.CJL250961

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology