[1] [1] A. Polman. Erbium implanted thin film photonic materials[J]. J. Appl. Phys., 1997, 82(1): 1-39

[2] [2] S. Coffa, G. Franzo, A. Polman. Temperature dependence and quenching processes of the intra-4f luminescence of Er n crystalline Si[J]. Phys. Rev. B, 1994, 49(23): 16313-16320

[3] [3] F. Namavar, F. Lu, H. Clive et al.. Visible and infrared (1.54 μm) emission From Er-implanted porous Si for photonic applications[J]. J. Elec. Mate., 1996, 25: 43-49

[4] [4] H A. Lopez, P. M. Fanchet, S. Chen et al.. Infrared LEDs and Microcavities based on erbium-doped silicon nanocomposites[J]. Mat. Sc. Eng. B, 2001, 81: 91-96

[5] [5] M. Stepikhova, W. Jantsch, G. Kocher et al.. Direct excitation spectroscopy of Er centers in porous silicon[J]. Appl. Phys. Lett., 1997, 71(20): 2975-2977

[6] [6] M. L. Brongersma, A. Polman Tuning the emission wavelength of Si nanocrystalls in SiO2 by oxidation [J]. Appl. Phys. Lett., 1998, 72(20): 2577-2580

[7] [7] P. G. Kik, M. L. Brongersma, A. Polman. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2[J]. Appl. Phys. Lett., 2000, 76(11): 2325-2327