Fig. 1. Everson etch pits of different shapes on CdZnTe （112）B surface

Fig. 2. Changes of etch pit geometries and positions on the （112） B surface during secondary etching

Fig. 3. Relations of etch pits on the （112）B surface and flat-bottom etch pits with different D/Ws on the （111）B surface （a） micrographs of etch pits with different D/Ws on the （111）B surface， （b） schematic diagrams of flat-bottom etch pits sectioned by （112） plane， （c） micrographs of etch pits observed on the （112）B surface coinciding with the geometries in （b）

Fig. 4. Pyramidal etch pits of extending defects oriented in <110> and <112> on the （111）B surface （a） ［101］ orietation， （b） ［011］ orientation， （c） ［110］ orientation， （d） ［211］ orientation， （e） ［121］ orientation， （f） ［112］ orientation

Fig. 5. Typical Everson etch pits on CdZnTe （112）B surface （a） <110> extending defects， （b） <112> extending defects， （c） <123> extending defects

Fig. 6. Orientation distributions of the extending defects in CdZnTe substrate samples on the (112) polar figure. The diamond points are the orientations of the extending defects observed by etch pit real-time observation technology on the (111)A surfaces . The observed area of the samples is 897.7 µm × 670 µm (a) sample M4834, (b) sample K4911