High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Xingye Zhou; Xin Tan; Yuangang Wang; Xubo Song; Tingting Han; Jia Li; Weili Lu; Guodong Gu; Shixiong Liang; Yuanjie Lü; Zhihong Feng

doi:10.3788/COL201917.090401

Chinese Optics Letters, Volume. 17, Issue 9, 090401(2019)

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü^*, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng, "High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area," Chin. Opt. Lett. 17, 090401 (2019)

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Paper Information

Category: Detectors

Received: Apr. 8, 2019

Accepted: May. 23, 2019

Posted: May. 27, 2019

Published Online: Jul. 24, 2019

The Author Email: Yuanjie Lü (yuanjielv@163.com), Zhihong Feng (ga917vv@163.com)

DOI:10.3788/COL201917.090401

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology