Fig. 1. Device structure design. (a) Schematic of mid-wave infrared InAs/InAsSb T2SLs photodetectors; (b) energy band diagram of nBn structure infrared detector

Fig. 2. PL spectra of InAs/InAsSb superlattice with different atomic number fractions of Sb

Fig. 3. AFM images of InAs/InAsSb/B-AlAsSb samples at different scanning areas

Fig. 4. Cross-sectional HRTEM image of InAs/InAsSb T2SL

Fig. 5. Test and fitting profiles of high-resolution XRD (004) ω-2θ

Fig. 6. Fabrication process for InAs/InAsSb focal plane detector

Fig. 7. Test of processing results. (a) Metallographic microscope image of device after passivation; (b) SEM image of device after passivation; (c) metallographic microscope image of mesa In column array; (d) 640×512 InAs/InAsSb type-II superlattice mid-wave infrared hybrid chip

Fig. 8. J-V characterization test results of device. (a) Temperature-dependent dark current characteristics and differential resistance area product (RA); (b) Arrhenius fitting plot of J-V characteristics

Fig. 9. Measured variation of detectivity of device

Fig. 10. 640×512 InAs/InAsSb type-II superlattice mid-wave infrared images. (a) Facial and flame image; (b) handprint image