Laser & Infrared, Volume. 54, Issue 2, 235(2024)

Research progress in indium antimonide single crystal material

SHE Wei-lin, ZHAO Chao, DONG Tao, and WANG Cheng-gang
Author Affiliations
  • 11th Research Institute of CETC, Bejing 100015, China
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    References(12)

    [1] [1] Svetlnana S, et al. Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers[J]. Modern Electronic Materials, 2020, 6(4): 147-153.

    [2] [2] Gershon G, Albo A, Eylon M. large format InSb infrared detector with 10 m pixels[C]//SPIE Optronics in Defence and Security (OPTRO), Paris, France: SPIE, 2014: 293191.

    [3] [3] Mike D, Mark G. Indium antimonide large-format detector arrays[J]. Optical Engineering, 2011, 50(6): 061016-1-6.

    [4] [4] Hoffman A W, Corrale E, Love P J. 2k × 2k InSb for astronomy[C].//SPIE Astronomical Telescopes+Instrumentation. Glasgow, United Kingdom: SPIE, 2004: 59-67.

    [5] [5] Alan W, et al. Development of 2k×2k FPA InSb modules for the NGST mission[C]//SPIE Astronomical Telescopes and Instrumentation. Waikoloa, Hawaii, United States: SPIE, 2002.

    [6] [6] Alan W, et al. Large infrared and visible arrays for low background applications: an overview of current developments at Raytheon[C]//SPIE Astronomical Telescopes+Instrumentation. Glasgow, United Kingdo: SPIE, 2004.

    [7] [7] Beuville E, Longshore R E, Sood A K, et al. High performance large infrared and visible astronomy arrays for low background applications: instruments performance data and future developments at Raytheon[C]//SPIE Infrared Systems and Photoelectronic Technology II. San Diego, California, United States: SPIE, 2007: 66600B.

    [9] [9] Nathan W. Gray, Victor Perez-Rubio, Joseph G. Bolke, et al. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates[C]//SPIE Infrared Sensors, Devices, and Applications IV, San Diego, California, United States: SPIE, 2014: 922003.

    [10] [10] Jason L. Merrell, Nathan W. Gray, Joseph G. Bolke, et al. Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications[C]//SPIE Defense+Security, Baltimore, MD, United States: SPIE, 2016: 981915.

    [11] [11] Becky Martinez, J. Patrick Flint, G. Dallas, et al. Standardizing large format 5" GaSb and InSb substrate production[C]//SPIE Defense+Security: Infrared Technology and Applications XLIII. Anaheim, CA, United States: SPIE, 2017.

    [12] [12] Flint P, Allen L P, Dallas G, et al. CMP process comparison for 150mm larger area InSb (111) B focal plane array substrates[J]. Optical Materials in Defence Systems Technology VI, 2009(9): 74870C.

    [13] [13] Roman Y, et al. Growth of 100 mm indium antimonide single crystals by modified Czochralski technique[J]. Modern Electronic Materials 2021, 7(2): 73-78.

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    SHE Wei-lin, ZHAO Chao, DONG Tao, WANG Cheng-gang. Research progress in indium antimonide single crystal material[J]. Laser & Infrared, 2024, 54(2): 235

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    Paper Information

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    Received: Oct. 29, 2023

    Accepted: Jun. 4, 2025

    Published Online: Jun. 4, 2025

    The Author Email:

    DOI:10.3969/j.issn.1001-5078.2024.02.011

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