Journal of Infrared and Millimeter Waves, Volume. 40, Issue 2, 178(2021)

W-band power combining amplifier based on silicon micromachined waveguide

Hai-Feng CHENG1,2, Xiang ZHU2, Fang HOU1,2, San-Ming HU1、*, Jian GUO1, and Gui-Xiong SHI2
Author Affiliations
  • 1State Key Laboratory of Millimeter Wave,Southeast University,Nanjing 210096,China
  • 2Nanjing Electronic Device Institute,Nanjing 210016,China
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    Figures & Tables(16)
    Fabrication process of silicon waveguide
    Model of the H-T splitter/combiner
    Simulated results of the H-T splitter/combiner
    Model of the 3 dB coupler
    Simulated results of the 3 dB coupler
    Model of the 4-way splitter/combiner
    Sectional view of the 4-way splitter/combiner
    Simulated results of the 4-way splitter/combiner
    Photographs of the fabricated 4-way splitter/combiner and the test fixture
    microscope view of waveguide port
    The insertion and return losses of the silicon splitter /combiner
    The typical tested result of W band GaN MMIC
    The structure of the silicon combined module
    The silicon combined PA module
    The test platform of the silicon combined PA module
    The measured output power, PAE and combining efficiency
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    Hai-Feng CHENG, Xiang ZHU, Fang HOU, San-Ming HU, Jian GUO, Gui-Xiong SHI. W-band power combining amplifier based on silicon micromachined waveguide[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 178

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    Paper Information

    Category: Research Articles

    Received: Mar. 26, 2020

    Accepted: --

    Published Online: Aug. 31, 2021

    The Author Email: San-Ming HU (sanming.hu@seu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2021.02.007

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