Surface properties such as profile and crystal phase of bent silicon samples by long laser pulses were analyzed. The results indicated that the irradiated surface was divided into ambient region, transition region and main function region. The surfaces of the transition region and main function region were changed seriously, and massing stacking fault and ripple profile were found respectively. The typical transformation of amorphous silicon was not found at Raman spectrum of the main function region, and only existed tiny Si-Ⅰ→Si-Ⅲ conversion. Meanwhile the crystal-plane orientation was changed seriously compared to the initial crystal-plane by X-ray crystal-plane identification, and crystal distortion and thinning appeared in the region irradiated.